Nihar Pradhan, Ph.D.

PradhanAssistant Professor 

Contact Information:
Phone: 601-979-7012
Science Hall, Room 326
nihar.r.pradhan@jsums.edu
Pradhan's Research Website


Education
Ph.D.: Condensed Matter Physics,
Worcester Polytechnic Institute, Worcester, MA, USA.
M.S. : In Physics, Worcester Polytechnic Institute, Worcester, MA, USA.
Postdoc: National High Magnetic Field Laboratory, Tallahassee, FL, USA

Research Interests
Experimental condensed matter physics and nanotechnology. My research interest is highly interdisciplinary, synthesis of single crystals layered materials, nanostructure fabrication, physics of materials and devices with nanoscale features. I am interested in studying electrical, optical and magnetic properties of two-dimensional layered semiconductors such as transition metal dichanlcogenides (TMDCs). When the thickness of these layered materials decreased to few atomic layers or even single atomic layer form, very interesting properties emerges due to quantum confinement effect. I am interested in investigating both fundamental physics as well as engineering devices for potential technological applications. My current research interest is in the following areas:

  1. 2D Layered semiconductors for Field-effect transistors (FETs) application
  2. Insulator-to-Metal transition on 2D semiconductor
  3. Photovoltaic, Phototransistors and novel optical effect on 2D semiconductor
  4. Magnetic data storage and spitronic based devices on magnetic nanostructures  

Selected Recent Publications

  1. N. R. Pradhan, C. Garcia, J. Holleman, D. Rhodes, C. Parker, S Talapatra, M. Terrones, L. Balicas and    S. A. McGill, Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements. 2D Materials, 2016, 3, 041004
  2. N. R. Pradhan, A. McCreary, D. Rhodes, Z. Lu, S. Feng, E. Manousakis, D. Smirnov, R. Namburu, M. Dubey, A. R. H. Walker, H. Terrones, M. Terrones, V. Dobrosavljvic and L. Balicas, Metal-to-insulator quantum-phase transition in few-layered ReS2. Nano Lett. 2015, 15 (12) 8377.
  3. S. Memaran, N. R. Pradhan, Z. Lu, D. Rhodes, J. Ludwig, Q. Zhou, M. Ajayan, D. Smirnov and L. Balicas, Pronounced photovoltaic response from PN-junction of multi-layered MoSe2 on h-BN. Nano Lett. 2015, 15 (11), 7532.
  4. N. R. Pradhan, Z. Lu, D. Rhodes, D. Smirnov, E. Manousakis and L. Balicas, An Optoelectronic switch based on intrinsic dual Schottky diodes in Ambipolar MoSe2 field-effect transistors. Adv. Electron. Mater. 2015, 1(10) 1500215,
  5. N. R. Pradhan, et. al. Optoelectronic switches: An Optoelectronic switch based on intrinsic dual Schottky diodes in Ambipolar MoSe2 field-effect transistors. Adv. Electron. Mater. 2015, 1(10), 1500215. DOI: 10.1002/aelm.201500215 (“COVER PAGE” of the Journal in “November 2015 Issue”)
  6. N. R. Pradhan, D Rhodes, S. Memaran, J. M. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Lopez, A. L. Elias, M. Terrones, P. M. Ajayan and L. Balicas, High Hall mobility on few layered p-WSe2 field-effect transistors. Scientific Reports (Nature), 2015, 5, 8979.
  7. N. R. Pradhan, D. Rhodes, Y. Xin, S. Memaran, L. Bhaskaran, M. Shiddiq, S. Hill, P. M. Ajayan, and L. Balicas, Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities. ACS Nano, 2014, 8 (8), 7923.
  8. N. R. Pradhan, D. Rhodes S. Feng, Y. Xin, S. Memaran, B. H. Moon, H. Terrones, M. Terrones and L. Balicas, Field-Effect transistors based on few–layered α-MoTe2. ACS Nano, 2014, 8, 5911.
  9. H Terrones, E. D. Corro, S. Feng, J. Poumirol, D. Rhodes, D. Smirnov, N. R. Pradhan, L. Zhong, M. A. T. Nguyen, A. L. Elias, T. E. Mallouk, L. Balicas, M. Pimenta and M. Terrones, New First Order Raman Modes in Few-Layered Transition Metal Dichalcogenides. Scientific Reports (Nature), 2014, 4, 4215.
  10. A. Elias, N. Lopez, A. Beltram, A. Berkdemir, R. Lu, S. Feng, A. Long, T. Hayashi, A. Kim, M Endo, H. Gutierrez, N. Pradhan, L. Balicas, T. Mallouk, F. Urias, H. Terrones and M. Terrones, Control Synthesis and transfer of Large area WS2 sheets: From single-layer to few-layers. ACS Nano, 2013, 7, 5235.
  11. N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P.M. Ajayan and L. Balicas, Intrinsic carrier mobility on multi-layered MoS2 field effect transistors on SiO2. Appl. Phys. Lett. 2013, 102, 123105.